Search results for "Photoluminescence excitation"
showing 10 items of 35 documents
Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties
2012
In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schrodinger equation for a cylindrical nanowire of infinite length, a…
Optical properties of InN nanocolumns: Electron accumulation at InN non‐polar surfaces and dependence on the growth conditions
2009
InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present atthe non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the densit…
Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental an…
2020
We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow…
Effect of annealing temperature on persistent luminescence of Y3Al2Ga3O12:Cr3+ co-doped with Ce3+ and Pr3+
2021
Abstract Y3(Al,Ga)5O12 (YAGG) materials doped with Ce3+, Cr3+ and Pr3+ were synthesized by using a modified Pechini method and subsequently annealed in air at selected temperatures between 900 and 1500 °C. According to X-ray powder diffraction (XRPD) and transmission electron microscopy (TEM) analyses, the particles and size distributions become large and broad, respectively, due to sintering and agglomeration at high annealing temperatures. Based on infrared (FTIR) spectra and calculation of multi-phonon de-excitation probabilities, the high energy O–H vibrations are not causing significant multi-phonon de-excitation of the emitting 5d level of Ce3+ if the annealing temperature is above 90…
Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells
2005
Monte Carlo simulation approach based on exciton hopping through randomly distributed localized states is proposed for quantitative characterization of the band edge of InxGa1–xN/GaN multiple quantum wells with different indium content (x ≈ 0.22–0.27). The band edge dynamics is investigated in the 10–300 K range by analyzing the measured S- and W-shaped temperature behavior of the photoluminescence peak position and linewidth, respectively. The simulation of the W-shaped temperature dependence using double-scaled potential profile model enabled us to estimate the scale of the potential fluctuations due to variation of indium content inside and among In-rich regions formed in InGaN alloy. In…
<title>Origin of visible photoluminescence in NiO and Ni<formula><inf><roman>c</roman></inf></formula>Mg<…
2003
A study of the visible photoluminescence in single-crystal NiO and NicMg1-cO (c = 0.99, 0.98 and 0.95) solid solutions is presented for the first time. Two wide luminescence bands, peaked at approximately 12000 cm-1 and approximately 18500 cm-1, were observed. The dependence of their intensity and position on the excitation energy, temperature, and composition were investigated. We attribute the origin of two photoluminescence bands to the impurity- or defect perturbed Ni2+ excitons.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments
2010
Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration $({N}_{D}^{+})$ and a two-dimensional density of ionized surface states $({N}_{ss}^{+})$. For NW radii larger than 30 nm, ${N}_{D}^{+}$ and ${N}_{ss}^{+}$ modify the absorption edge and the lineshape, respectively, and can be determined f…
Band structure of indium selenide investigated by intrinsic photoluminescence under high pressure
2004
This paper reports on photoluminescence experiments in $n$-type indium selenide $(T=300\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ under hydrostatic pressure up to 7 GPa at low and high excitation densities. Photoluminescence measurements at low excitation density exhibit a broad band around the energy of the direct band gap of $\mathrm{InSe}$ and with the same pressure dependence. The reversible increase of its linewidth above $1\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ is associated to a direct-to-indirect band-gap crossover between valence band maxima. The reversible decrease of its intensity above $4\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ is interpreted as evidence of a direct-to-indirect b…
A multiaxial electrical switching in a one-dimensional organic–inorganic (pyrrolidinium)2Cd2I6ferroelectric and photoluminescent crystal
2021
Ferroelectric materials exhibiting more than one polar phase are very attractive in terms of application. The advantage of such materials is temperature-dependent switching between two different ferroelectric states. Here we report on the discovery of a unique, continuous ferroelectric – ferroelectric transformation in (C4H10N)2[Cd2I6], PCdI at 220 K. Thermal measurements suggest that phase transition is close to the continuous one. Both phases belong to the same polar monoclinic Cc space group. Temperature-variable X-ray diffraction measurements of single crystals confirm the polar nature of the two phases (I and II). The anionic network is in the form of [Cd2I6]2− 1D chains, with pyrrolid…
Si nanocrystals embedded in $SiO_2$: Optical studies in the vacuum ultraviolet range
2011
Photoluminescence excitation and transmission spectra of Si nanocrystals of different diameters embeddedin a SiO2 matrix have been investigated in the broad visible-vacuum ultraviolet spectral range usingsynchrotron radiation. The dependence of the photoluminescence excitation spectra on the nanocrystals sizewas experimentally established. It is shown that the photoluminescence excitation and absorption spectra aresignificantly blueshifted with decreasing Si nanocrystal size. A detailed comparison of photoluminescenceexcitation and absorption spectra with data from theoretical modeling has been done. It is demonstrated thatthe experimentally determined blueshift of the photoluminescence exc…